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A 266.7 TOPS/W Computing-in Memory Using Single-Ended 6T 4-kb SRAM in 16-nm FinFET CMOS Process.

Cheng-Yao LoLean Karlo Santos TolentinoJhih-Ying KeJeffrey S. WallingYang YiChua-Chin Wang
Published in: AICAS (2024)
Keyphrases
  • knowledge base
  • power consumption
  • random access memory
  • low power
  • computing power
  • memory space
  • dynamic random access memory
  • database
  • data structure
  • random access