A 22-31 GHz Bidirectional 5G Transceiver Front-End in 28 nm CMOS.
D. ManenteFabio QuadrelliFabio PadovanMatteo BassiAndrea MazzantiAndrea BevilacquaPublished in: ESSCIRC (2021)
Keyphrases
- high speed
- cmos technology
- ultra low power
- silicon on insulator
- low power
- nm technology
- power consumption
- metal oxide semiconductor
- frequency band
- back end
- clock frequency
- circuit design
- ultra wide band
- low cost
- analog vlsi
- low voltage
- power supply
- parallel processing
- focal plane
- real time
- frequency response
- power dissipation
- delay insensitive
- dual band
- ultra wideband
- image sensor
- integrated circuit
- high frequency
- intel xeon