Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests.
Zhan GaoFrancesca ChiocchettaFabiana RampazzoCarlo De SantiMirko FornasierGaudenzio MeneghessoMatteo MeneghiniEnrico ZanoniPublished in: IRPS (2023)