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Atomic layer deposited Hf0.5Zr0.5O2-based flexible RRAM.

Tian-Yu WangLin-Jie YuLin ChenHao LiuHao ZhuQing-Qing SunShi-Jin DingPeng ZhouDavid Wei Zhang
Published in: ASICON (2017)
Keyphrases
  • high frequency
  • leakage current
  • multi layer
  • low frequency
  • information retrieval
  • mahalanobis distance
  • databases
  • e learning
  • image processing
  • face recognition
  • lightweight
  • silicon dioxide