Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states.
T. StecconiYouri PopoffR. GuidoMattia HalterDonato Francesco FalconeAntonio La PortaFolkert HorstLaura Bégon-LoursMarilyne SousaBert J. OffreinValeria BragagliaPublished in: DRC (2022)