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Amorphous Metal Oxide Bilayers to Avoid Sneak-Path Currents for High-Density Resistive Memory Arrays.

Shruti NirantarMd. Ataur RahmanEdwin MayesMadhu BhaskaranSumeet WaliaSharath Sriram
Published in: Adv. Intell. Syst. (2021)
Keyphrases
  • high density
  • thin film
  • metal oxide
  • low density
  • x ray
  • close proximity
  • solid state
  • data center
  • random access
  • high power
  • high bandwidth
  • magnetic recording
  • high speed
  • main memory
  • magnetic tape
  • three dimensional