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Design Criteria of High-Temperature Integrated Circuits Using Standard SOI CMOS Process up to 300°C.

Christian SbranaAlessandro CataniaMaksym PaliyStefano Di PascoliSebastiano StrangioMassimo MacucciGiuseppe Iannaccone
Published in: IEEE Access (2024)
Keyphrases
  • integrated circuit
  • design criteria
  • high temperature
  • design methodology
  • electron beam
  • radial basis function