An All-MOSFET Voltage Reference-Based PUF Featuring Low BER Sensitivity to VT Variations and 163 fJ/Bit in 180-nm CMOS.
Peizhou GanXiaojin ZhaoYuan CaoPublished in: IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. (2021)
Keyphrases
- metal oxide
- high speed
- low voltage
- solid state
- x ray
- power supply
- random access memory
- cmos technology
- error rate
- power consumption
- high sensitivity
- nm technology
- clock gating
- electronic devices
- silicon on insulator
- low cost
- power system
- bit error rate
- low power
- ofdm system
- transmission line
- cmos image sensor
- parallel processing
- circuit design
- design considerations
- delay insensitive
- high voltage
- sensitivity analysis
- analog to digital converter
- image compression