A 7 GHz ERBW 1.1 GS/s 6-bit PVT Tolerant Asynchronous Charge-Injection SAR With Only 8.5 fF Input Capacitance in 28 nm CMOS.
Jongho KimGyuchan ChoJintae KimPublished in: IEEE J. Solid State Circuits (2024)
Keyphrases
- high speed
- shift register
- low power
- clock gating
- power consumption
- power dissipation
- metal oxide
- nm technology
- cmos technology
- random access memory
- delay insensitive
- heuristic search
- input data
- low cost
- synthetic aperture radar
- real time
- charge coupled device
- sar images
- design considerations
- high frequency
- power reduction
- diesel engine
- analog vlsi