A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing.
Shaun ChouGu-Huan LiShawn ChenJun-Hao ChangWan-Hsueh ChengShao-Ding WuPhilex FanChia-En HuangYu-Der ChihYih WangJonathan ChangPublished in: VLSI Circuits (2021)
Keyphrases
- high voltage
- cmos technology
- field effect transistors
- nm technology
- endpoint detection
- low power
- flip flops
- low cost
- operating conditions
- steady state
- power dissipation
- power consumption
- chip design
- single chip
- image sensor
- high density
- metal oxide semiconductor
- knowledge base
- high speed
- mathematical analysis
- random access
- low voltage
- random access memory
- real time
- silicon on insulator
- normal operation
- parallel processing
- sensor networks
- partial discharge
- training data
- neural network