Energy states in GaAs delta-doped field effect transistors under hydrostatic pressure.
J. C. Martínez-OrozcoI. Rodríguez-VargasM. E. Mora-RamosC. A. DuquePublished in: Microelectron. J. (2008)
Keyphrases
- field effect transistors
- steady state
- high density
- schottky barrier
- room temperature
- mathematical analysis
- semiconductor devices
- energy minimization
- markov chain
- low energy
- energy consumption
- three dimensional
- chip design
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- energy distribution
- minimum energy
- initial state
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- state transitions
- state variables
- website
- bayesian networks