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Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories.

Zhe WangYan LiuJiuren ZhouGenquan Han
Published in: Microelectron. J. (2024)
Keyphrases
  • content addressable
  • field effect transistors
  • steady state
  • high density
  • mathematical analysis
  • schottky barrier
  • peer to peer
  • magnetic tape
  • chip design
  • relational databases
  • distributed systems