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Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region.

Dong FangGuang YangMing QiaoKui XiaoXiangyu YangZheng BianBo Zhang
Published in: Microelectron. J. (2022)
Keyphrases
  • field effect transistors
  • metal oxide semiconductor
  • high density
  • steady state
  • mathematical analysis
  • schottky barrier
  • integrated circuit
  • low cost
  • real time
  • image sequences
  • input image
  • vision system
  • markov chain