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Morphological and optical properties of p-type GaAs(001) layers doped with silicon.

T. E. LamasS. MartiniM. J. da SilvaA. A. QuivyJ. R. Leite
Published in: Microelectron. J. (2003)
Keyphrases
  • optical properties
  • gallium arsenide
  • room temperature
  • image processing
  • multiscale
  • viewpoint
  • high density
  • field effect transistors