A 28 nm 81 Kb 59-95.3 TOPS/W 4T2R ReRAM Computing-in-Memory Accelerator With Voltage-to-Time-to-Digital Based Output.
Keji ZhouXinru JiaChenyang ZhaoXumeng ZhangGuangjian WuChen MuHaozhe ZhuYanting DingChixiao ChenXiaoyong XueXiaoyang ZengQi LiuPublished in: IEEE J. Emerg. Sel. Topics Circuits Syst. (2022)