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A DC-coupled 50 Gb/s 0.064 pJ/bit thin-oxide level shifter in 28 nm FDSOI CMOS.

Hannes RamonJochem VerbistMichael VanhoeckeJoris LambrechtLaurens BreyneGuy TorfsJohan Bauwelinck
Published in: IEICE Electron. Express (2018)
Keyphrases
  • high speed
  • higher level
  • metal oxide
  • low cost
  • silicon on insulator
  • random access memory
  • analog vlsi
  • transmission electron microscopy