A 322 MHz random-cycle embedded DRAM with high-accuracy sensing and tuning.
Masahisa IidaNaoki KurodaHidefumi OtsukaMasanobu HiroseYuji YamasakiKiyoto OhtaKazuhiko ShimakawaTakashi NakabayashiHiroyuki YamauchiTomohiko SanoTakayuki GyohtenMasanao MarutaAkira YamazakiFukashi MorishitaKatsumi DosakaMasahiko TakeuchiKazutami ArimotoPublished in: IEEE J. Solid State Circuits (2005)