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A smartphone SP10T T/R switch in 180-nm SOI CMOS with 8kV+ ESD protection by co-design.
X. Shawn Wang
Xin Wang
Fei Lu
Li Wang
Rui Ma
Zongyu Dong
Li Sun
Albert Z. Wang
C. Patrick Yue
Dawn Wang
Alvin J. Joseph
Published in:
CICC (2013)
Keyphrases
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silicon on insulator
cmos technology
high speed
ibm power processor
transmission line
mobile devices
mobile applications
information security
low power
dynamic random access memory
daily life
allocation strategy
protection scheme
electron beam
low voltage
data protection
low cost