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Channel- & Drift Region's STI-Lengths Impacts of ESD Immunity in HV 60 V nLDMOS Devices.

Sheng-Kai FanShen-Li ChenYu-Lin JhouPei-Lin WuPo-Lin Lin
Published in: ICCE-TW (2019)
Keyphrases
  • mobile devices
  • image regions
  • multi channel
  • concept drift
  • computational complexity
  • region of interest
  • embedded systems
  • data sets
  • homogeneous regions
  • channel capacity
  • error accumulation
  • drift detection