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A 28GHz Two-Way Current Combining Stacked-FET Power Amplifier in 22nm FD-SOI.

Zhiwei ZongXinyan TangJohan NguyenKhaled KhalafGiovanni MangravitiYao LiuPiet Wambacq
Published in: CICC (2020)
Keyphrases
  • silicon on insulator
  • high power
  • power consumption
  • high density
  • data sets
  • neural network
  • high speed
  • frequency band
  • reactive power compensation