Login / Signup

Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers.

Ryo NakaoMasakazu AraiTakaaki KakitsukaShinji Matsuo
Published in: IEICE Trans. Electron. (2018)
Keyphrases
  • multi layer
  • injection lasers
  • growth rate
  • buffer size
  • application layer
  • information retrieval
  • video sequences
  • low energy electron
  • data sets
  • steady state
  • database replication
  • middle layer
  • gallium arsenide