0.18-V input charge pump with forward body biasing in startup circuit using 65nm CMOS.
Po-Hung ChenKoichi IshidaXin ZhangYasuaki OkumaYoshikatsu RyuMakoto TakamiyaTakayasu SakuraiPublished in: CICC (2010)
Keyphrases
- cmos technology
- high speed
- circuit design
- silicon on insulator
- nm technology
- metal oxide semiconductor
- analog vlsi
- low power
- delay insensitive
- low cost
- power consumption
- vlsi circuits
- low voltage
- parallel processing
- data acquisition
- human body
- charge coupled devices
- power dissipation
- condition monitoring
- analog circuits
- metal oxide
- reinforcement learning