Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers.
Haochen ZhangYue SunKunpeng HuLei YangKun LiangZhanyong XingHu WangMingshuo ZhangHuabin YuShi FangYang KangHaiding SunPublished in: Sci. China Inf. Sci. (2023)