A 1V 357Mb/s-throughput transferjet™ SoC with embedded transceiver and digital baseband in 90nm CMOS.
Masahisa TamuraFumitaka KondoKatsumi WatanabeYasunori AokiYusuke ShinoheKoki UchinoYuhei HashimotoFumihiro NishiyamaHiroaki MiyachiIkuho NagaseItaru UezonoRie HisamuraItaru MaekawaPublished in: ISSCC (2012)
Keyphrases
- low power
- metal oxide semiconductor
- embedded systems
- ultra low power
- cmos technology
- low cost
- circuit design
- mixed signal
- phase locked loop
- power consumption
- cmos image sensor
- high speed
- integrated circuit
- response time
- silicon on insulator
- hardware and software
- dynamic random access memory
- digital content
- image sensor
- single chip
- nm technology