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Fully integrated Si: HfO2 Negative Capacitance 2D-2D WSe2/SnSe2 Subthermionic Tunnel FETs.

Sadegh KamaeiAli SaeidiXia LiuCarlotta GastaldiClara MoldovanJürgen BruggerAdrian M. Ionescu
Published in: ESSCIRC (2022)
Keyphrases
  • fully integrated
  • high speed
  • leakage current
  • workflow management
  • low power
  • electrical properties
  • database
  • knowledge representation
  • low voltage