III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance.
Abhitosh VaisSachin YadavYves MolsBjorn VermeerschKomal Vondkar KodandaramaMarina BaryshnikovaG. MannaertR. AlcotteGeert BoccardiPiet WambacqBertrand ParvaisR. LangerBernardette KunertNadine CollaertPublished in: ESSDERC (2022)