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Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction.

Dong LiuJohn PapapolymerouParsian K. MohseniMichael BeckerJung-Hun SeoJohn D. AlbrechtTimothy A. GrotjohnZhenqiang MaSang Jung ChoAaron HardyJisoo KimCristian J. Herrera-RodriguezEdward SwinnichMohadeseh A. BaboliJiarui GongXenofon Konstantinou
Published in: BCICTS (2019)
Keyphrases
  • field effect transistors
  • high density
  • gallium arsenide
  • power consumption
  • space charge
  • genetic algorithm
  • image processing
  • steady state
  • low power