A 0.4 µg Bias Instability and 1.2 µg Hz Noise Floor MEMS Silicon Oscillating Accelerometer With CMOS Readout Circuit.
Xi WangJian ZhaoYang ZhaoGuo Ming XiaAn Ping QiuYan SuYong Ping XuPublished in: IEEE J. Solid State Circuits (2017)
Keyphrases
- high speed
- cmos technology
- low power
- circuit design
- metal oxide semiconductor
- silicon on insulator
- delay insensitive
- noise level
- real time
- analog vlsi
- noise reduction
- frame rate
- low cost
- gallium arsenide
- vlsi circuits
- image noise
- low frequency
- parallel processing
- signal to noise ratio
- noisy data
- focal plane
- activity recognition
- frequency band
- gesture recognition
- bias variance
- semiconductor devices
- power consumption
- gate dielectrics
- missing data