A 0.47V-1.17V 32KB Timing Speculative SRAM in 28nm HKMG CMOS.
Mishal KumarAnuj GroverVivek DikshitVarshita GuptaPublished in: VDAT (2020)
Keyphrases
- cmos technology
- power consumption
- nm technology
- low power
- low voltage
- random access memory
- leakage current
- knowledge base
- silicon on insulator
- parallel processing
- power dissipation
- power reduction
- high speed
- metal oxide semiconductor
- embedded dram
- dynamic random access memory
- image sensor
- low cost
- real time
- asynchronous circuits
- design considerations
- general knowledge
- wireless sensor networks