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Investigation of self-heating effect in SOI tunnel field-effect transistor.

C. QianMao-Lin ShiLin ChenQing-Qing SunPeng ZhouS. J. DingD. W. Zhang
Published in: ASICON (2015)
Keyphrases
  • field effect transistors
  • high density
  • mathematical analysis
  • high speed
  • schottky barrier
  • steady state
  • negative impact
  • multi agent
  • data structure
  • cost effective