High-Efficiency E-Band Power Amplifiers and Transmitter Using Gate Capacitance Linearization in a 65-nm CMOS Process.
Tianzuo XiSherry HuangShita GuoPing GuiDaquan HuangSudipto ChakrabortyPublished in: IEEE Trans. Circuits Syst. II Express Briefs (2017)
Keyphrases
- high efficiency
- high power
- low power
- cmos technology
- power dissipation
- power consumption
- nm technology
- high speed
- power supply
- high accuracy
- real and synthetic datasets
- low cost
- memory space
- low voltage
- high frequency
- communication systems
- result quality
- power reduction
- real time
- frequency band
- silicon on insulator
- low pass
- digital signal processing
- arbitrary shape
- power management
- high density
- spectral resolution