Gate Leakage in Non-Volatile Ferroelectric Transistors: Device-Circuit Implications.
Sandeep Krishna ThirumalaSumeet Kumar GuptaPublished in: DRC (2018)
Keyphrases
- field effect transistors
- metal oxide semiconductor
- cmos technology
- high density
- semiconductor devices
- steady state
- mathematical analysis
- low cost
- equivalent circuit
- low power
- file system
- integrated circuit
- high speed
- low voltage
- circuit design
- image sensor
- silicon on insulator
- data storage
- database systems
- neural network
- main memory
- power consumption
- analog circuits
- high power
- data acquisition
- markov chain
- query processing
- evolutionary algorithm
- leakage current