Sensing Margin Enhancement Techniques for Ultra-Low-Voltage SRAMs Utilizing a Bitline-Boosting Current and Equalized Bitline Leakage.
Anh-Tuan DoTruc Quynh NguyenKiat Seng YeoTony Tae-Hyoung KimPublished in: IEEE Trans. Circuits Syst. II Express Briefs (2012)