Operation Scheme Optimizations to Achieve Ultra-high Endurance (1010) in Flash Memory with Robust Reliabilities.
Yang FengZhaohui SunChengcheng WangXinyi GuoJunyao MeiYueran QiJing LiuJunyu ZhangJixuan WuXuepeng ZhanJiezhi ChenPublished in: CoRR (2024)