Vertical Surrounding Gate Transistor for High Density and Low Voltage Operation in DRAM.
Wenqi WangSang Don YiFu LiQingchen CaoJiangliu ShiBok-Moon KangMeichen JinChang LiuZhenhua WuGuilei WangChao ZhaoPublished in: IEEE Access (2024)
Keyphrases
- high density
- low voltage
- leakage current
- field effect transistors
- cmos technology
- design considerations
- low density
- power line
- data center
- low power
- power management
- close proximity
- thin film
- power dissipation
- magnetic recording
- power consumption
- high speed
- random access memory
- high bandwidth
- databases
- low cost
- energy efficiency
- markov chain
- image sequences