CRAM: Collocated SRAM and DRAM With In-Memory Computing-Based Denoising and Filling for Neuromorphic Vision Sensors in 65 nm CMOS.
Xueyong ZhangVivek MohanArindam BasuPublished in: IEEE Trans. Circuits Syst. II Express Briefs (2020)
Keyphrases
- dynamic random access memory
- embedded dram
- random access memory
- denoising
- vision sensors
- cmos technology
- silicon on insulator
- low voltage
- metal oxide semiconductor
- power consumption
- low power
- memory subsystem
- vision sensor
- main memory
- design considerations
- moving objects
- leakage current
- nm technology
- high speed
- image processing
- ibm power processor
- low cost
- power dissipation
- binary images
- omnidirectional images
- flash memory