Login / Signup

Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour.

Jean-Pierre LandesmanChristophe LevalloisJuan JiménezFrédéric PommereauYoan LégerAlexandre BeckThomas DelhayeAlfredo TorresCesare FrigeriAhmed Rhallabi
Published in: Microelectron. Reliab. (2015)
Keyphrases