Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel.

Ryosho Nakane Shoichi Sato Masaaki Tanaka

Published in: ESSDERC (2019)

Keyphrases

field effect transistors
steady state
high density
metal oxide semiconductor
schottky barrier
mathematical analysis
semiconductor devices
low cost
markov chain
three dimensional
sensor networks
integrated circuit
image sensor