OTA based 200 GΩ resistance on 700 μm2 in 180 nm CMOS for neuromorphic applications.
Christian MayrMichael SchultzMarko NoackStephan HenkerJohannes PartzschRené SchüffnyPublished in: CoRR (2014)
Keyphrases
- silicon on insulator
- cmos technology
- floating gate
- metal oxide semiconductor
- nm technology
- metal oxide
- high speed
- low power
- power consumption
- integrated circuit
- low cost
- low voltage
- solid state
- image sensor
- circuit design
- neural network
- analog vlsi
- parallel processing
- power supply
- multiple output
- vlsi circuits
- hd video
- x ray
- image processing
- information systems
- real time
- single chip
- image processing algorithms
- rolling shutter