13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference.
Yu-Der ChihYi-Chun ShihChia-Fu LeeYen-An ChangPo-Hao LeeHon-Jarn LinYu-Lin ChenChieh-Pu LoMeng-Chun ShihKuei-Hung ShenHarry ChuangTsung-Yung Jonathan ChangPublished in: ISSCC (2020)