A 250 mV, 352 μ W GPS Receiver RF Front-End in 130 nm CMOS.
Adam C. HeibergThomas William BrownTerri S. FiezKartikeya MayaramPublished in: IEEE J. Solid State Circuits (2011)
Keyphrases
- silicon on insulator
- cmos technology
- metal oxide semiconductor
- radio frequency
- nm technology
- back end
- power consumption
- gps data
- low cost
- high speed
- low power
- relevance feedback
- rfid reader
- power supply
- urban environments
- global positioning system
- location based services
- mobile devices
- end to end
- analog vlsi
- integrated circuit
- multipath
- map matching
- circuit design
- image sensor
- wifi
- location information
- signal strength
- position information
- navigation systems
- vlsi circuits
- mobile phone