Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors.
E. A. DouglasC. Y. ChangB. P. GilaM. R. HolzworthKevin S. JonesLu LiuJinhyung KimSoohwan JangGlen David ViaFan RenStephen J. PeartonPublished in: Microelectron. Reliab. (2012)