A 0.41 µA Standby Leakage 32 kb Embedded SRAM with Low-Voltage Resume-Standby Utilizing All Digital Current Comparator in 28 nm HKMG CMOS.
Noriaki MaedaShigenobu KomatsuMasao MorimotoKoji TanakaYasumasa TsukamotoKoji NiiYasuhisa ShimazakiPublished in: IEEE J. Solid State Circuits (2013)
Keyphrases
- low voltage
- leakage current
- cmos technology
- power consumption
- power dissipation
- power management
- mixed signal
- random access memory
- low power
- power line
- design considerations
- knowledge base
- energy efficiency
- data center
- nm technology
- parallel processing
- power reduction
- data management
- image processing
- e learning
- silicon on insulator