A 3.6 mW, 90 nm CMOS Gated-Vernier Time-to-Digital Converter With an Equivalent Resolution of 3.2 ps.
Ping LuAntonio LiscidiniPietro AndreaniPublished in: IEEE J. Solid State Circuits (2012)
Keyphrases
- power consumption
- power supply
- metal oxide semiconductor
- analog to digital converter
- cmos technology
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- single phase
- data conversion
- hd video
- circuit design
- nm technology
- mixed signal
- low power
- cmos image sensor
- integrated circuit
- wind turbine
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- image processing
- silicon on insulator
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- digital content
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- analog vlsi
- vlsi circuits
- dc dc converter
- single chip
- image sensor
- multi channel
- low cost
- neural network