Device reliability for CMOS image sensors with backside through-silicon vias.
Jeff Peter GambinoH. SoleimaniI. RahimB. RiebeekL. ShengG. HoseyH. TruongGavin D. R. HallR. JeromeD. PricePublished in: IRPS (2018)
Keyphrases
- image sensor
- metal oxide semiconductor
- video camera
- dynamic range
- high density
- image processing algorithms
- low power
- hardware and software
- single chip
- digital camera
- cmos technology
- imaging systems
- field effect transistors
- liquid crystal
- integrated circuit
- motion blur
- gate dielectrics
- solid state
- power consumption
- high speed
- silicon on insulator
- spatially varying
- real time
- high quality
- three dimensional
- multimedia