Login / Signup

Improved reliability characteristics of Ge MOS devices by capping Hf or Zr on interfacial layer.

Yan-Lin LiKuei-Shu Chang-LiaoYu-Wei ChangTse-Jung HuangChen-Chien LiZhao-Chen GuPo-Yen ChenTzung-Yu WuJiayi HuangFu-Chuan ChuShih-Han Yi
Published in: Microelectron. Reliab. (2017)
Keyphrases
  • high frequency
  • multi layer
  • genetic algorithm
  • database
  • neural network
  • embedded devices
  • learning algorithm
  • e learning
  • mobile devices
  • frequency domain
  • improved algorithm