A ±0.48°C (3σ) Inaccuracy BJT-Based Temperature Sensor With 241 μs Conversion Time for Display Driver IC in 40 nm CMOS.
Yong-Sung AhnJeong-Mi ParkJin-Ku KangJaehoon JunPublished in: IEEE Access (2023)
Keyphrases
- image sensor
- cmos technology
- metal oxide semiconductor
- integrated circuit
- cmos image sensor
- heat flow
- real time
- silicon on insulator
- sensor networks
- low cost
- sensor data
- power consumption
- multi sensor
- video camera
- low power
- liquid crystal
- nm technology
- focal plane
- dynamic range
- single chip
- analog vlsi
- circuit design
- power supply
- high speed
- room temperature
- sensor fusion
- data acquisition
- analog to digital converter
- neural network
- electric field
- high temperature
- image processing algorithms
- road safety
- vlsi circuits
- digital camera
- wireless sensor networks