A back-illuminated 6 μm SPAD depth sensor with PDE 36.5% at 940 nm via combination of dual diffraction structure and 2×2 on-chip lens.

Yutaro Fujisaki Hidenobu Tsugawa K. Sakai H. Kumagai R. Nakamura Tomoharu Ogita S. Endo T. Iwase H. Takase K. Yokochi S. Yoshida S. Shimada Y. Otake T. Wakano H. Hiyama K. Hagiwara M. Arakawal S. Matsumotol H. Maeda K. Sugihara K. Takabayashi M. Ono K. Ishibashi K. Yamamoto

Published in: VLSI Technology and Circuits (2023)

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