High performance WTe2-MoS2in-plane heterojunction Tunnel Field Effect Transistors.
Jean ChoukrounMarco PalaShiang FangEfthimios KaxirasPhilippe DollfusPublished in: ESSDERC (2018)
Keyphrases
- schottky barrier
- field effect transistors
- semiconductor devices
- mathematical analysis
- high density
- steady state
- three dimensional
- general purpose
- cost effective
- high efficiency
- free space
- data intensive
- databases
- signal processing
- high speed
- high reliability
- small sized
- grid points
- state space
- artificial neural networks
- computer vision