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GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology.
J. Gao
Y. Jin
B. Xie
C. P. Wen
Y. Hao
M. Wang
Published in:
DRC (2018)
Keyphrases
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figure of merit
high density
edge detector
image processing
structuring elements